The bi-directional switching device without p-n junctions

Author

Ueno, K. ; Konishi, Y. ; Fujisawa, N. ; Sakai, K. ; Ryoukai, Y. ; Seki, Y.

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Yokosuka, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

325

Lastpage

328

Abstract

In this paper, we show bi-directional switching by devices without any p-n junctions, using the ACCUFET (accumulation mode FET) structure. The device size used for the demonstration of switching behaviour was 4×4 mm². The device blocks the voltage via the deep depletion region until holes accumulate at the SiO₂-silicon interface to shrink the depletion region. The obtained on-resistance and forward blocking voltage were around 6.4 mΩ-cm², and 50 V, respectively. Bi-directional switching at 100 kHz was demonstrated by a single chip for the first time

Keywords

accumulation layers; electric resistance; interface states; power MOSFET; power semiconductor switches; semiconductor device testing; 100 kHz; 4 mm; 50 V; ACCUFET structure; Si; SiO₂-Si; SiO₂-silicon interface; accumulation mode FET structure; bi-directional switching; bi-directional switching device; deep depletion region; depletion region shrinkage; device size; forward blocking voltage; hole accumulation; on-resistance; p-n junctions; single chip bi-directional switching; switching behaviour; voltage blocking; Annealing; Bidirectional control; Cities and towns; Electrons; Fabrication; Oxidation; P-n junctions; Production facilities; Research and development; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702699

Filename

702699