Charge-pumping extraction techniques for hot-carrier induced interface and oxide trap spatial distributions in MOSFETs

Author

Starkov, I. ; Enichlmair, H. ; Tyaginov, S. ; Grasser, T.

Author_Institution

Christian Doppler Lab. for Reliability Issues in Microelectron., Vienna Univ. of Technol., Vienna, Austria

fYear

2012

fDate

2-6 July 2012

Firstpage

1

Lastpage

6

Abstract

A thorough analysis of charge-pumping extraction techniques for hot-carrier induced defect spatial distribution in MOSFETs has been carried out. We discuss the main features of the existing approaches reflecting upon their shortcomings and applicability limits. For our investigations a new simple and accurate compact model for the MOSFET local oxide capacitance has been employed. The spatial distribution extracted from experiment is in a good agreement with the findings of our physics-based model of hot-carrier degradation.

Keywords

MOSFET; capacitance; charge pump circuits; hot carriers; semiconductor device models; MOSFET; charge-pumping extraction technique; hot-carrier degradation; hot-carrier induced defect spatial distribution; hot-carrier induced interface; local oxide capacitance; oxide trap spatial distribution; physics-based model; Capacitance; Charge pumps; Current measurement; Feature extraction; Hot carriers; Logic gates; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4673-0980-6

Type

conf

DOI

10.1109/IPFA.2012.6306266

Filename

6306266