• DocumentCode
    3373201
  • Title

    TID characterization of 0.13µm SONOS cell in 4Mb NOR flash memory

  • Author

    Qiao, Fengying ; Yu, Xiao ; Pan, Liyang ; Ma, Haozhi ; Wu, Dong ; Xu, Jun

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2012
  • fDate
    2-6 July 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we investigate the TID response of 0.13μm SONOS cell with different charge states up to 2 Mrad(Si) and propose an improved model. Additionally, radiation experiment results show that IRD increase is the main reason for read error in the fabricated 4Mb flash memory chip.
  • Keywords
    NOR circuits; flash memories; radiation hardening (electronics); IRD; NOR flash memory; SONOS cell; TID characterization; memory size 4 MByte; radiation experiment; size 0.13 micron; Degradation; Electron traps; Equations; Flash memory; Mathematical model; SONOS devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
  • Conference_Location
    Singapore
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4673-0980-6
  • Type

    conf

  • DOI
    10.1109/IPFA.2012.6306287
  • Filename
    6306287
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3373201