DocumentCode
3373413
Title
Tensile Testing of Single Crystal Silicon Thin Films at 800°C using IR Heating
Author
Ikeda, T. ; Sugano, K. ; Tsuchiya, T. ; Tabata, O.
Author_Institution
Kyoto Univ., Kyoto
fYear
2007
fDate
10-14 June 2007
Firstpage
571
Lastpage
574
Abstract
This paper reports on the development of a new tensile tester operable at 800degC using IR heating system for evaluating mechanical properties of thin films at high temperature. Single crystal silicon films of 3 mum thick were tested at 600degC. At room temperature, the fracture strength and Young´s modulus were 3.33 GPa and 163.2 GPa, respectively. At 600degC, they were 2.71 GPa and 151.8 GPa, respectively. When the strain rate was decreased, the stress and stage displacement curves had yield points and the fractured specimens exhibited the slip lines at 600degC.
Keywords
Young´s modulus; elemental semiconductors; fracture toughness; heat treatment; semiconductor thin films; silicon; tensile testing; yield point; IR heating system; Si; Young´s modulus; film thickness; fracture strength; infrared heating system; mechanical properties; room temperature; single crystal silicon thin films; size 3 mum; slip lines; strain rate; stress-stage displacement curves; temperature 293 K to 298 K; temperature 600 degC; temperature 800 degC; tensile tester; yield points; Capacitive sensors; Heating; Mechanical factors; Semiconductor films; Semiconductor thin films; Silicon; Stress; System testing; Temperature; Transistors; mechanical properties; plastic deformation; single crystal silicon; tensile test; thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location
Lyon
Print_ISBN
1-4244-0842-3
Electronic_ISBN
1-4244-0842-3
Type
conf
DOI
10.1109/SENSOR.2007.4300194
Filename
4300194
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