DocumentCode
3373499
Title
Low frequency noise in iron disilicide hetero-junction solar cells
Author
Bag, A. ; Mukherjee, C. ; Mallik, S. ; Maiti, C.K.
Author_Institution
Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, India
fYear
2012
fDate
2-6 July 2012
Firstpage
1
Lastpage
4
Abstract
Low-frequency noise characteristics in forward-biased silicon iron disilicide solar cells have been studied for reliability analysis. Noise spectral density as a function of frequency is compared for both the p-β-FeSi2 (Al) and p-β-FeSi2 solar cells. Burst noise and its bias dependency have been studied for both the devices.
Keywords
burst noise; reliability; solar cells; bias dependency; burst noise; forward-biased silicon iron disilicide solar cells; iron disilicide heterojunction solar cells; low frequency noise characteristics; noise spectral density; reliability analysis; Indium tin oxide; Low-frequency noise; Photovoltaic cells; Reliability; Semiconductor device measurement; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4673-0980-6
Type
conf
DOI
10.1109/IPFA.2012.6306301
Filename
6306301
Link To Document