DocumentCode
3374026
Title
A test circuit for measuring standard deviations of MOSFET channel conductance and threshold voltage
Author
Terada, Kazuo ; Sumida, Masaki
Author_Institution
Fac. of Inf. Sci., Hiroshima City Univ., Japan
fYear
2002
fDate
8-11 April 2002
Firstpage
61
Lastpage
66
Abstract
A new test circuit is proposed for measuring the standard deviations of both MOSFET channel conductance and threshold voltage. This test circuit consists of the matrix-shape MOSFET array in which several switches and wiring are added. DC currents flowing through this array are measured, changing the ON/OFF states of the switches, and then the standard deviations are calculated from them.
Keywords
MOSFET; semiconductor device measurement; semiconductor device testing; DC current; MOSFET; channel conductance; matrix array; standard deviation measurement; test circuit; threshold voltage; Circuit testing; Integrated circuit measurements; MOSFET circuits; Measurement standards; Resistors; Semiconductor device measurement; Switches; Switching circuits; Threshold voltage; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2002. ICMTS 2002. Proceedings of the 2002 International Conference on
Print_ISBN
0-7803-7464-9
Type
conf
DOI
10.1109/ICMTS.2002.1193172
Filename
1193172
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