• DocumentCode
    3375212
  • Title

    Low voltage power devices for future VRM

  • Author

    Huang, Alex Q. ; Sun, Nick X. ; Zhang, Bo ; Zhou, Xunwei ; Lee, F.C.

  • Author_Institution
    Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • fYear
    1998
  • fDate
    3-6 Jun 1998
  • Firstpage
    395
  • Lastpage
    398
  • Abstract
    In this paper, a fully depleted LDD MOSFET built on silicon-on-oxide is proposed as a candidate device for future voltage regulator modules (VRM), which are dedicated DC/DC converters to power advanced microprocessors, and which are expected to work at multi-megahertz frequencies
  • Keywords
    doping profiles; microprocessor chips; modules; power MOSFET; semiconductor device models; silicon-on-insulator; voltage regulators; DC/DC converters; Si-SiO2; fully depleted LDD MOSFET; low voltage power devices; microprocessors; silicon-on-oxide; voltage regulator modules; Capacitance; Capacitors; Frequency; Low voltage; MOSFET circuits; Microprocessors; Power MOSFET; Power electronics; Sun; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-4752-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.1998.702727
  • Filename
    702727
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3375212