• DocumentCode
    3375888
  • Title

    19% efficient screen- printed cells using a passivated transparent boron back surface field

  • Author

    Das, Arnab ; Kim, Dong Seop ; Meemongkolkiat, Vichai ; Rohatgi, Ajeet

  • Author_Institution
    University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer, Engineering, Georgia Institute of Technology, Atlanta, 30332, U.S.A.
  • fYear
    2008
  • fDate
    11-16 May 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Boron back surface field is a promising replacement for the industry standard screen-printed Aluminum. However, the use of boron back surface fields is largely confined to laboratory scale solar cells. In order to increase its industrial applicability, we present a method for achieving a high quality boron back surface field using a cheap and safe boron source and short diffusion time. Metal contacts are fabricated using screen-printing, and degradation of rear passivation after contact firing is minimized through optimized screen-printing of local (point) contacts on the rear. On p-type silicon wafers, this process technology has been utilized to achieve, on 4 cm2 cells, efficiency of up to 19.1% with open-circuit voltage of 650 mV.
  • Keywords
    Aluminum; Boron; Laboratories; Lithography; Passivation; Photovoltaic cells; Production; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-1640-0
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2008.4922437
  • Filename
    4922437