DocumentCode
3377039
Title
Stress induced degradation modes in CIGS mini-modules
Author
Kempe, M.D. ; Terwilliger, K.M. ; Tarrant, D.
Author_Institution
National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, CO 80401, USA
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
6
Abstract
The stability of monolithically integrated copper (indium, gallium) (selenium, sulfur) (CIGS) based thin film solar cells on glass were evaluated as a function of highly accelerated stress testing. Mini-modules exposed to high humidity (85°C and 85% RH) had a dominant failure mechanism involving increased resistance in the ZnO:Al transparent conducting oxide. Under Dry heat (85°C and 0% RH) performance loss was much slower and involved the weakening of diodes lowering Voc and loss of fill factor. These mini-modules were encapsulated using either ethylene vinyl-acetate (EVA) or a Silicone. It was found that encapsulation with EVA led to greater increases in series resistance. These experiments point to the importance of module packaging, transparent conducting oxide stability and cell integration in constructing durable CIGS modules.
Keywords
Copper; Degradation; Gallium compounds; Glass; Indium; Life estimation; Photovoltaic cells; Stability; Stress; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922497
Filename
4922497
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