Loss analysis of 1.55 /spl mu/m vertical cavity lasers

Author

Piprek, J. ; Babic, D.I. ; Margalit, N.M. ; Bowers, J.E.

Author_Institution

Delaware Univ., Newark, DE, USA

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

25

Lastpage

26

Abstract

Recently, room temperature cw operation of 1.55 μm InGaAsP MQW DBR VCSELs has been achieved for the first time. At higher temperatures, laser operation is restricted by internal losses including intervalenceband absorption and carrier leakage. Measured characteristics are simulated using a comprehensive numerical model to analyze those losses in detail and to optimize the VCSEL design.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser theory; laser transitions; optical design techniques; optical losses; optical transmitters; optimisation; quantum well lasers; semiconductor device models; surface emitting lasers; /spl mu/m vertical cavity laser loss analysis; 1.55 mum; InGaAsP; InGaAsP MQW DBR VCSELs; VCSEL design optimisation; carrier leakage; comprehensive numerical model; higher temperatures; internal losses; intervalenceband absorption; laser operation; room temperature cw operation; Absorption; Analytical models; Design optimization; Distributed Bragg reflectors; Laser modes; Loss measurement; Numerical models; Quantum well devices; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553731

Filename

553731