• DocumentCode
    3377789
  • Title

    Studies of Cu location near the back contact of CdS/CdTe solar cells

  • Author

    Plotnikov, V.V. ; Liu, X. ; Compaan, A.D.

  • Author_Institution
    Department of Physics and Astronomy, University of Toledo, OH 43606 USA
  • fYear
    2008
  • fDate
    11-16 May 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We have used the x-ray fluorescence signal from copper selectively excited with a ∼10 keV photon beam from the Argonne Advanced Photon Source to probe low levels of copper in sputtered CdTe cells. Through a peel-off technique that separates the evaporated Cu/Au back contact from the CdTe, we are able to determine where the Cu resides after cell preparation is finished. With a 3 to 4 nm Cu layer under the 20 nm of gold, we find that about 10% stays with the CdTe after contact peel-off. Recontacting these cells with fresh gold yields cell performance very close to the originally prepared contacts indicating that only 3–4 Å of copper is needed for a good contact that exhibits no rollover in the first quadrant of the I–V curve.
  • Keywords
    Astronomy; Copper; Fluorescence; Gold; Grain boundaries; Photovoltaic cells; Physics; Probes; Semiconductor device doping; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-1640-0
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2008.4922540
  • Filename
    4922540