Impact of process-induced damage on MOSFET reliability and suppression of damage by the use of NO-based oxynitride gate dielectrics

Author

Min, B.W. ; Bhat, M. ; Han, L.K. ; Cho, T.H. ; Joshi, A.B. ; Mann, R. ; Chung, L. ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

fYear

1995

fDate

31 May-2 Jun 1995

Firstpage

273

Lastpage

276

Abstract

Conventional SiO₂ gate oxide is found to show enhanced degradation due to cumulative plasma-induced damages as processed through back-end. However, an alternate oxynitride gate dielectric, namely, NO-nitrided SiO₂, demonstrates excellent immunity to plasma charging. It is observed that compared to SiO₂, NO-nitrided oxides show suppressed dependence of damage on charging collection area. A systematic study of effects of NO-anneal condition on the degree of resistance to charging shows that even minimal thermal budgets are capable of producing high quality gate oxides

Keywords

MOSFET; annealing; dielectric thin films; nitridation; semiconductor device reliability; semiconductor technology; sputter etching; MOSFET reliability; NO; NO-nitrided SiO₂; SiON; annealing; oxynitride gate dielectric; plasma charging; process-induced damage; thermal budget; Degradation; Dielectrics; Etching; MOSFET circuits; Nitrogen; Plasma accelerators; Plasma applications; Plasma devices; Plasma materials processing; Reliability engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-2773-X

Type

conf

DOI

10.1109/VTSA.1995.524702

Filename

524702