• DocumentCode
    3378205
  • Title

    Decomposition of drain-current variation into gain-factor and threshold voltage variations

  • Author

    Sato, Takashi ; Uezono, Takumi ; Nakayama, Noriaki ; Masu, Kazuya

  • Author_Institution
    Grad. Sch. of Inf., Kyoto Univ., Kyoto, Japan
  • fYear
    2010
  • fDate
    May 30 2010-June 2 2010
  • Firstpage
    1053
  • Lastpage
    1056
  • Abstract
    A predictable device models should correctly handle parameter variations. Good recognition of the variation of physical parameters, which are being the sources of current variations of modern devices, is thus significantly important. In this paper, we present a practical procedure for decomposing device current variation into physical parameter variations. Based on the I-V curve measurements, two variation components: threshold voltage variation and gain-factor variation are clearly separated. Cause of gain-factor variation is further discussed with measurement results of poly-Si resistor. The impact of the variation-sources on circuit performance is also evaluated using SRAM noise margin as an example.
  • Keywords
    SRAM chips; circuit noise; elemental semiconductors; resistors; silicon; I-V curve measurements; SRAM noise margin; Si; drain-current variation decomposition; gain-factor variation; physical parameter variations; polySi resistor; predictable device models; threshold voltage variations; Circuit optimization; Circuit synthesis; Current measurement; Gain measurement; Leakage current; MOSFET circuits; Matrix decomposition; Resistors; Semiconductor device measurement; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-5308-5
  • Electronic_ISBN
    978-1-4244-5309-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.2010.5537354
  • Filename
    5537354