DocumentCode
3378205
Title
Decomposition of drain-current variation into gain-factor and threshold voltage variations
Author
Sato, Takashi ; Uezono, Takumi ; Nakayama, Noriaki ; Masu, Kazuya
Author_Institution
Grad. Sch. of Inf., Kyoto Univ., Kyoto, Japan
fYear
2010
fDate
May 30 2010-June 2 2010
Firstpage
1053
Lastpage
1056
Abstract
A predictable device models should correctly handle parameter variations. Good recognition of the variation of physical parameters, which are being the sources of current variations of modern devices, is thus significantly important. In this paper, we present a practical procedure for decomposing device current variation into physical parameter variations. Based on the I-V curve measurements, two variation components: threshold voltage variation and gain-factor variation are clearly separated. Cause of gain-factor variation is further discussed with measurement results of poly-Si resistor. The impact of the variation-sources on circuit performance is also evaluated using SRAM noise margin as an example.
Keywords
SRAM chips; circuit noise; elemental semiconductors; resistors; silicon; I-V curve measurements; SRAM noise margin; Si; drain-current variation decomposition; gain-factor variation; physical parameter variations; polySi resistor; predictable device models; threshold voltage variations; Circuit optimization; Circuit synthesis; Current measurement; Gain measurement; Leakage current; MOSFET circuits; Matrix decomposition; Resistors; Semiconductor device measurement; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location
Paris
Print_ISBN
978-1-4244-5308-5
Electronic_ISBN
978-1-4244-5309-2
Type
conf
DOI
10.1109/ISCAS.2010.5537354
Filename
5537354
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