An Atomic Level Simulation System for Silicon Anisotropic Etching Processes Handling Complex Cases: Accuracy, Efficiency and Experimental Verification

This paper reports an atomic level simulation system for silicon anisotropic etching based on an accurate atomic level model with comprehensive physical and chemical points and an efficient dynamic algorithm. The atomic level model accurately describes the contributions from the first nearest atoms (FNA), the direct second nearest atoms (DSNA), the indirect second nearest atoms (ISNA) and their locations with respect to the etching surface to the etching processes of surface atoms. The simulation results have found to be in good agreement with the experimental results and the simulation system demonstrates to be high accurate, efficient, and complex cases can be efficiently handled.