DocumentCode
3380052
Title
A Ka-Band BiCMOS T/R Module for Phased Array Applications
Author
Min, Byung-Wook ; Rebeiz, Gabriel M.
Author_Institution
Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
fYear
2008
fDate
12-15 Oct. 2008
Firstpage
1
Lastpage
4
Abstract
This paper presents a Ka-Band BiCMOS trans- mint/receive (T/R) module with amplitude and phase control. In the receive mode, the 33-37 GHz T/R module results in a gain of 9-19 dB, a noise figure of 4-5 dB and an input PidB of -29 dBm. In the transmit mode, the maximum gain and output PdB are 10 dB and +5.5 dBm, respectively, and can be controlled over a 10 dB range (output Psat is +8 dBm). The measured rms gain and phase errors are < 0.6 dB and < 7deg, respectively, in both the transmit and receive modes. The chip is only 0.93 times 1.33 mm2 and consumes 58 mW and 29 mW in the transmit and receive modes, respectively. To our knowledge, this is the first Ka- Band BiCMOS T/R module to-date, and with applications in satellite communications and defense systems.
Keywords
BiCMOS integrated circuits; military equipment; millimetre wave integrated circuits; satellite communication; transceivers; BiCMOS; Ka-Band; amplitude control; defense systems; frequency 33 GHz to 37 GHz; gain 9 dB to 19 dB; noise figure 4 dB to 5 dB; phase control; phased array applications; power 29 mW; power 58 mW; satellite communications; size 0.93 mm; size 1.33 mm; transmit/receive module; BiCMOS integrated circuits; Gain measurement; Germanium silicon alloys; Noise measurement; Phase measurement; Phase shifters; Phased arrays; Propagation losses; Silicon germanium; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location
Monterey, CA
ISSN
1550-8781
Print_ISBN
978-1-4244-1939-5
Electronic_ISBN
1550-8781
Type
conf
DOI
10.1109/CSICS.2008.24
Filename
4674479
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