DocumentCode
3381302
Title
Modified BVD-equivalent circuit of FBAR by taking electrodes into account
Author
Chao, Min-Chiang ; Huang, Zi-Neng ; Pao, Shih-Yung ; Wang, Z. ; Lam, C.S.
Author_Institution
TXC Corp., Tao-Yuan, Taiwan
Volume
1
fYear
2002
fDate
8-11 Oct. 2002
Firstpage
973
Abstract
A modified BVD-equivalent circuit model is developed when taking the thin electrodes as mass loading. It is shown that the mass of the electrodes can be directly added onto the mass of the piezoelectric film to form a series inductor and a capacitance is added to the capacitance of the film in parallel. The results implied that the traditional BVD model could be applied to the three-layer resonators with thick electrodes. Numerical simulations for three-layer FBAR consisting of AlN film with thick electrodes were carried out, and results showed that a simple L1-C-1-R1 and C0 model is perfectly applicable for thick electrodes when the two electrodes have similar thickness. If the thickness of the two electrodes is very different, the simple BVD model can´t be simply used.
Keywords
III-V semiconductors; aluminium compounds; equivalent circuits; piezoelectric materials; piezoelectric semiconductors; piezoelectric thin films; semiconductor thin films; surface acoustic wave resonator filters; wide band gap semiconductors; AlN; FBAR; capacitance; mass loading; modified BVD-equivalent circuit; piezoelectric film; series inductor; thin electrodes; three-layer resonators; Capacitance; Dielectric losses; Electrodes; Equivalent circuits; Film bulk acoustic resonators; Numerical simulation; Piezoelectric films; Resonance; Resonant frequency; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE
ISSN
1051-0117
Print_ISBN
0-7803-7582-3
Type
conf
DOI
10.1109/ULTSYM.2002.1193558
Filename
1193558
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