DocumentCode
3381838
Title
Bridgman-grown CuInSe2 with added Na2 Se and Na
Author
Myers, Hadley ; Champness, Clifford ; Shih, Ishiang
Author_Institution
McGill University, Montreal, Quebec, Canada
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
6
Abstract
Ingots containing single crystals were grown from melts containing Cu, In and Se in either stoichiometric proportions (CuInSe2 ) or with an excess of Se (CuInSe2.2 ). In addition, elemental sodium Na0 was introduced to both sets of compositions in concentrations ranging from 0 to 3 at. %. Analysis of white deposits on the ampoule walls after growth revealed the presence of Na, however, none was found within the crystals. Further, a red deposit was also analyzed, and was revealed to contain sodium and various forms of the other elements. Thermoelectric power (α) measurements showed little change in the p-type conductivity of CuInSe2.2 ingots with increases of Na0, but a dramatic type change from p to n was observed for stoichiometric CuInSe2 with Na0 concentrations above at least 0.1 at. %. This is in stark contrast to previous work using Na2 Se, for which α was seen to decrease for both CuInSe2 and CuInSe2.2 , implying a hole concentration increase of more than an order of magnitude.
Keywords
Conductivity measurement; Crystals; Power measurement; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922732
Filename
4922732
Link To Document