Advanced 45nm MOSFET small-signal equivalent circuit aging under DC and RF hot carrier stress

Author

Negre, L. ; Roy, D. ; Boret, S. ; Scheer, P. ; Gloria, D. ; Ghibaudo, G.

fYear

2011

fDate

10-14 April 2011

Abstract

The continuous CMOS performance improvement enhances the interest of the RF CMOS for millimeter wave application. Hence the extension of DC reliability model in the RF domain is becoming critical. Understanding the MOSFET aging influence on the small signal equivalent circuit is a key concern to integrate the RF reliability simulation at compact model level. In this work, an accurate setup which allows the application of RF stress and the monitoring of DC/RF parameters is detailed. Hot carrier stress is performed on MOSFET and a physical analysis of the small signal equivalent circuit aging is done.

Keywords

MOSFET; ageing; equivalent circuits; field effect MIMIC; hot carriers; millimetre wave field effect transistors; semiconductor device models; semiconductor device reliability; stress effects; CMOS performance improvement; DC parameter monitoring; DC reliability model; MOSFET small-signal equivalent circuit aging; RF CMOS; RF hot carrier stress; RF parameter monitoring; RF reliability simulation; millimeter wave application; size 45 nm; Aging; Degradation; Equivalent circuits; Integrated circuit modeling; MOSFET circuits; Radio frequency; Stress; MOSFET; RF; aging; equivalent circuit; extraction; hot-carrier degradation; load-pull; reliability; small-signal;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784583

Filename

5784583