Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFETs

Author

El-Mamouni, F. ; Zhang, E.X. ; Schrimpf, R.D. ; Reed, R.A. ; Galloway, K.F. ; McMorrow, D. ; Simoen, E. ; Claeys, C. ; Cristoloveanu, S. ; Xiong, W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

fYear

2011

fDate

10-14 April 2011

Abstract

Pulsed laser-induced current transient experiments are used to understand the mechanisms of single-event effects in bulk and fully depleted silicon-on-insulator p-channel FinFETs. The drain current transients are significantly larger in the bulk FinFETs than in the SOI devices. Bulk FinFETs collected 270 times more charge than SOI FinFETs. 98% of the charge collected in the bulk FinFETs is generated in the substrate. The rest of the collected charge (2%) is generated in the fins. Most of the collected charge in the SOI FinFets is generated in the fins.

Keywords

MOSFET; silicon-on-insulator; SOI devices; bulk FinFET; collected charge; drain current transients; fully depleted silicon-on-insulator p-channel FinFET; pulsed laser-induced transient currents; silicon-on-insulator FinFET; single-event effects; FinFETs; Laser beams; Lasers; Logic gates; Silicon on insulator technology; Substrates; Transient analysis; FinFET; Silicon-on-insulator (SOI); charge collection; charge generated; fin; laser energy; multi-gate transistors; single event effects (SEEs); single photon absorption (SPA); transient measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784597

Filename

5784597