• DocumentCode
    3382536
  • Title

    Failure analysis of design qualification testing: 2007 VS. 2005

  • Author

    Tamizhmani, G. ; Li, B. ; Arends, T. ; Kuitche, J. ; Raghuraman, B. ; Shisler, W. ; Farnsworth, K. ; Gonzales, J. ; Voropayev, A. ; Symanski, P.

  • Author_Institution
    Arizona State University Photovoltaic Testing Laboratory (ASU-PTL), 7349 East Unity Avenue, Mesa, 85212 USA
  • fYear
    2008
  • fDate
    11-16 May 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The design/performance qualification testing is a set of well-defined accelerated stress tests with strict pass/fail criteria. ASU-PTL is an ISO 17025 accredited testing laboratory and has been providing photovoltaic testing services since 1992. This paper presents a failure analysis on the design qualification testing of both crystalline silicon (c-Si) and thin-film technologies for two consecutive periods: 1997–2005 & 2005–2007. In the first period, the industry was growing at a slower rate with traditional manufacturers and the qualification testing of c-Si technologies was primarily conducted per Edition 1 of IEC 61215 standard. In the second period, the industry was growing at an explosive rate with new manufacturers joining the traditional manufacturers and the qualification testing of c-Si was primarily conducted per Edition 2 of IEC 61215. Similar failure analysis according to IEC 61646 has been carried out for the thin-film technologies as well. The failure analysis of the test results presented in this paper indicates a large increase in the failure rates for both c-Si and thin-film technologies during the period of 2005–2007.
  • Keywords
    Failure analysis; IEC standards; ISO standards; Laboratories; Life estimation; Manufacturing industries; Qualifications; Stress; Testing; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-1640-0
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2008.4922768
  • Filename
    4922768