DocumentCode
3382562
Title
Optically active Si surfaces
Author
Kuznicki, Zbigniew T. ; Bigot, Jean-Yves
Author_Institution
Photonic System Laboratory, ENSPS Pÿle API Parc d´´Innovation, Boulevard Sébastien Brant, BP 10413, 67400 Illkirch, France
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
5
Abstract
The optoelectronics and photonics properties of silicon are fundamentally influenced by the density of carriers present near the sample surface. One way of generating very large densities of such carriers is to confine them in a Si nanolayer made by implantation followed by a suitable thermal treatment. In that way, one can photo-generate a two dimensional (2D) plasma which modifies the complex refractive index of the nanolayer.
Keywords
Absorption; Carrier confinement; Nonlinear optics; Optical scattering; Optical surface waves; Passivation; Plasma density; Plasma measurements; Pulse measurements; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922769
Filename
4922769
Link To Document