DocumentCode
3383151
Title
Effects of unintended dopants on I–V characteristics of the double-gate MOSFETs, a simulation study
Author
Li, Peicheng ; Mei, Guanghui ; Hu, Guangxi ; Liu, Ran ; Tang, Tingao
Author_Institution
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
735
Lastpage
738
Abstract
In this paper, we study the effects of an unintional dopant in the channel on the current-voltage characteristics of a Double Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green´s Function (NEGF) approach is used. A fast and efficient model to calculate the drain current is presented.
Keywords
Green´s function methods; MOSFET; current-voltage characteristics; double-gate MOSFET; drain current; nonequilibrium Green function; MOSFET circuits; Current-Voltage Characteristics; Double Gate; MOSFET; Unintended Dopants;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location
Xiamen
ISSN
2162-7541
Print_ISBN
978-1-61284-192-2
Electronic_ISBN
2162-7541
Type
conf
DOI
10.1109/ASICON.2011.6157310
Filename
6157310
Link To Document