A novel linear power amplifier for 2.6GHz LTE applications

Author

Deng, Jianbao ; Zhang, Shilin ; Mao, Luhong ; Xie, Sheng ; Li, Huichao

Author_Institution

Sch. of Electron. & Inf. Eng., Tianjin Univ., Tianjin, China

fYear

2011

fDate

25-28 Oct. 2011

Firstpage

808

Lastpage

811

Abstract

The design of RF power amplifier (PA) is a challenging task in deep submicron CMOS process. This paper presents a novel power amplifier (PA) for long term evolution (LTE) wireless communication system applications. Associated with antenna design, dipole antenna is used as resonance inductance of the differential PA. The total chip area is reduced greatly to 550μm×450μm in a 0.18μm CMOS process due to saving two on-chip inductors. Operating in Class-AB with a supply voltage of 3.3V, the linear PA can provide a total linear output power of 21dBm with a power gain of 18dB and maximum power added efficiency (PAE) of 23% at 2.6GHz.

Keywords

CMOS integrated circuits; Long Term Evolution; dipole antennas; power amplifiers; LTE application; LTE wireless communication system; RF power amplifier; antenna design; deep submicron CMOS process; differential PA; dipole antenna; frequency 2.6 GHz; linear power amplifier; long term evolution; on-chip inductors; resonance inductance; size 0.18 mum; voltage 3.3 V; CMOS integrated circuits; CMOS technology; Radio frequency; Resistors; WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC (ASICON), 2011 IEEE 9th International Conference on

Conference_Location

Xiamen

ISSN

2162-7541

Print_ISBN

978-1-61284-192-2

Electronic_ISBN

2162-7541

Type

conf

DOI

10.1109/ASICON.2011.6157328

Filename

6157328