DocumentCode
3384663
Title
Analysis of carrier capture and escape in InGaAsP-InP quantum well lasers
Author
Plyavenek, A.G. ; Lyubarskii, A.V.
Author_Institution
United Optoelectron. Lab., Inst. of Radio Eng. Electron. & Autom., Moscow, Russia
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
101
Lastpage
102
Abstract
We demonstrate that the combined effect of the space charge and 3D carrier reflections at quantum well boundaries plays a dominant role in determining the effective capture and escape times in InGaAsP-InP quantum well lasers.
Keywords
III-V semiconductors; carrier density; gallium arsenide; gallium compounds; indium compounds; laser theory; quantum well lasers; semiconductor device models; space charge; 3D carrier reflections; InGaAsP-InP; InGaAsP-InP quantum well lasers; carrier capture; carrier escape; effective capture times; effective escape times; quantum well boundaries; space charge; Charge carrier density; Indium phosphide; Laser modes; Laser theory; Laser transitions; Optical reflection; Poisson equations; Quantum well lasers; Radioactive decay; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.553767
Filename
553767
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