DocumentCode
3385334
Title
Do the defects make it work? Defect engineering in pi-conjugated polymers and their solar cells
Author
Wang, Dong ; Reese, Matthew ; Kopidakis, Nikos ; Gregg, Brian A.
Author_Institution
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
3
Abstract
The charged defect density in common π-conjugated polymers such as poly(3-hexylthiophene), P3HT, is around 1018 cm−3. Despite, or perhaps because of, this huge defect density, bulk heterojunction solar cells made from these polymers and a C60 derviative such as PCBM exhibit some of the highest efficiencies (∼5%) yet obtained in solid state organic photovoltaic cells. We discuss defects in molecular organic semiconductors and in π-conjugated polymers. These defects can be grouped in two categories, covalent and noncovalent. Somewhat analogous to treating amorphous silicon with hydrogen, we introduce chemical methods to modify the density and charge of the covalent defects in P3HT by treating it with electrophiles such as dimethyl sulfate and nucleophiles such as sodium methoxide. The effects of these treatments on the electrical and photovoltaic properties and stability of organic PV cells is discussed in terms of the change in the number and chemical properties of the defects. Finally, we address the question of whether the efficiency of OPV cells requires the presence of these defects which function as adventitious p-type dopants. Their presence relieves the resistance limitations usually encountered in cleaner organic semiconductors and can create built-in electric fields at junctions. These considerations lead toward the design of a new generation of OPV materials that replaces the covalent defects with purposely added dopants.
Keywords
Amorphous silicon; Chemicals; Heterojunctions; Hydrogen; Organic semiconductors; Photovoltaic cells; Photovoltaic systems; Polymers; Solar power generation; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922905
Filename
4922905
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