DocumentCode
3385454
Title
Design on mixed-voltage I/O buffers with slew-rate control in low-voltage CMOS process
Author
Ker, Ming-Dou ; Wang, Tzu-Ming ; Hu, Fang-Ling
Author_Institution
Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu
fYear
2008
fDate
Aug. 31 2008-Sept. 3 2008
Firstpage
1047
Lastpage
1050
Abstract
A new design on mixed-voltage I/O buffers with slew-rate control but without gate-oxide reliability problem in low-voltage CMOS process is proposed. The proposed circuit can effectively reduce the ground bounce effects without suffering gate-oxide reliability problems and hot-carrier degradation issues. The proposed mixed-voltage I/O buffer with slew-rate control has been designed in a 0.18-mum CMOS process to meet the 1.5-V/3.3-V applications.
Keywords
CMOS integrated circuits; buffer circuits; hot carriers; input-output programs; gate-oxide reliability; ground bounce effects; hot-carrier degredation; low-voltage CMOS process; mixed-voltage I/O buffers; slew-rate control; CMOS process; Circuit noise; Crosstalk; Degradation; Driver circuits; Electromagnetic interference; Hot carriers; Inductance; Rails; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location
St. Julien´s
Print_ISBN
978-1-4244-2181-7
Electronic_ISBN
978-1-4244-2182-4
Type
conf
DOI
10.1109/ICECS.2008.4675036
Filename
4675036
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