Built-in current sensor for IDDQ testing in deep submicron CMOS

Author

Calin, T. ; Anghel, L. ; Nicolaidis, M.

Author_Institution

TIMA, Grenoble, France

fYear

1999

fDate

1999

Firstpage

135

Lastpage

142

Abstract

This paper describes results on Built-In Current Sensors (BICS) destined to overcome the limitations of I_DDQ testing in deep submicron circuits. The problems of performance penalty, test accuracy and test speed are addressed. A new sensor composed of a source-controlled comparator operating at low supply voltages and bias currents is used. Gradual sensor activation ensures reliable low noise operation. It is combined with large bypass MOS switches avoiding performance penalty, as well as a second bypass and compensation logic to increase test speed

Keywords

CMOS digital integrated circuits; VLSI; built-in self test; current comparators; electric current measurement; electric sensing devices; integrated circuit noise; integrated circuit testing; leakage currents; low-power electronics; IDDQ testing; built-in current sensor; compensation logic; deep submicron CMOS; large bypass MOS switches; low bias currents; low supply voltages; performance penalty; reliable low noise operation; source-controlled comparator; test accuracy; test speed; CMOS image sensors; CMOS technology; Circuit faults; Circuit testing; Image sensors; Logic testing; Low voltage; Semiconductor device modeling; Subthreshold current; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Test Symposium, 1999. Proceedings. 17th IEEE

Conference_Location

Dana Point, CA

ISSN

1093-0167

Print_ISBN

0-7695-0146-X

Type

conf

DOI

10.1109/VTEST.1999.766657

Filename

766657