• DocumentCode
    3386207
  • Title

    DSTN sleep transistor sizing with a new approach to estimate the maximum instantaneous current

  • Author

    Sun, Yu ; Xiao, Li-yi ; Shi, Cong

  • Author_Institution
    Microelectron. Center, Harbin Inst. of Technol., Harbin, China
  • fYear
    2010
  • fDate
    May 30 2010-June 2 2010
  • Firstpage
    3717
  • Lastpage
    3720
  • Abstract
    Power gating is one of most effective ways to suppress the leakage power in CMOS digital circuits. In this paper, we propose a new method to estimate the maximum instantaneous current (MIC), and derive an analytical model for the MIC of the clusters in distributed sleep transistor network (DSTN) power-gated circuits. Based on this MIC estimation model, we perform ST sizing in DSTN power-gated circuits. Experimental results show that we have achieved higher precision and less runtime.
  • Keywords
    CMOS digital integrated circuits; leakage currents; transistors; CMOS digital circuits; DSTN power-gated circuits; DSTN sleep transistor sizing; MIC estimation model; analytical model; distributed sleep transistor network; leakage power; maximum instantaneous current; power gating; Added delay; CMOS digital integrated circuits; CMOS technology; Logic; Microelectronics; Microwave integrated circuits; Sleep; Sun; Switching circuits; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-5308-5
  • Electronic_ISBN
    978-1-4244-5309-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.2010.5537752
  • Filename
    5537752