DocumentCode
3386223
Title
Scanning tunneling microscopy of surface structures of InAs layers on GaAs (001) substrates
Author
Ikoma, Nobuyuki ; Ohkouchi, Shunsuke
Author_Institution
Optoelectron. Technol. Res. Lab., Ibaraki, Japan
fYear
1996
fDate
21-25 Apr 1996
Firstpage
618
Lastpage
621
Abstract
In this paper, we discuss our investigation of the surface structures of InAs layers on GaAs (001) vicinal substrates under As-stabilized and In-stabilized conditions by scanning tunneling microscopy (STM). The results are discussed along with those for InAs vicinal substrates
Keywords
III-V semiconductors; indium compounds; scanning tunnelling microscopy; surface structure; As-stabilized conditions; GaAs; GaAs (001) substrates; GaAs (001) vicinal substrates; In-stabilized conditions; InAs; InAs layers; InAs vicinal substrates; InAs-GaAs; STM; scanning tunneling microscopy; surface structures; Gallium arsenide; Laboratories; Molecular beam epitaxial growth; Substrates; Surface morphology; Surface reconstruction; Surface structures; Temperature; Thermodynamics; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location
Schwabisch-Gmund
Print_ISBN
0-7803-3283-0
Type
conf
DOI
10.1109/ICIPRM.1996.492324
Filename
492324
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