Characteristics of the high-power 980 nm laser diodes with decoupled confinement heterostructure

Author

Okubo, A. ; Yamada, Y. ; Oeda, Y. ; Igarashi, Koji ; Fujimoto, Takafumi ; Yamada, Y. ; Muro, Keiji

Author_Institution

Electron. & Inf. Mater. Lab., Mitsui Chem. Inc., Chiba, Japan

Volume

1

fYear

1999

fDate

21-26 Feb. 1999

Firstpage

26

Abstract

Performance of 980-nm high-power InGaAs-AlGaAs laser diodes featuring novel DCH structure is given. A reliability data (50/spl deg/C/70/spl deg/C-300 mW) indicates a potential for telecommunication use. We also achieved 300 mW from fiber module.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser reliability; laser transitions; modules; optical transmitters; semiconductor device reliability; semiconductor lasers; wavelength division multiplexing; 300 mW; 50 C; 70 C; 980 nm; DCH structure; InGaAs-AlGaAs; InGaAs-AlGaAs laser diode; decoupled confinement heterostructure; fiber module; high-power 980 nm laser diodes; optical transmitters; reliability data; telecommunication use; Carrier confinement; Chemical lasers; Diode lasers; Erbium-doped fiber lasers; Fiber lasers; Laser modes; Optical fibers; Optical pumping; Power lasers; Pump lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication. OFC/IOOC '99. Technical Digest

Conference_Location

San Diego, CA, USA

Print_ISBN

1-55752-582-X

Type

conf

DOI

10.1109/OFC.1999.767782

Filename

767782