• DocumentCode
    3386433
  • Title

    A low power low noise amplifier for portable GPS receivers

  • Author

    Xia, Wenbo ; Zhang, Xiaolin

  • Author_Institution
    Sch. of Electron. Inf. Eng., Beihang Univ., Beijing, China
  • fYear
    2009
  • fDate
    23-25 July 2009
  • Firstpage
    793
  • Lastpage
    796
  • Abstract
    An integrated 1.5 GHz low power Low Noise Amplifier (LNA) for portable global positioning system (GPS) receivers is proposed based on SMIC 180 nm 1P6M RF CMOS process. The MOS transistors in the proposed LNA are biased in moderately inverted region to achieve low power. The post-layout simulation results show that, at worst case, a voltage gain of 19 dB is achieved with noise figure (NF) of 4.2 dB, an input third order intermodulation point (IIP3) of -14 dBm and an input return loss of -8 dB. The power consumption of the circuit is only 1 mW at supply voltage of 0.7 V. The ratio of gain to dc power consumption is 19 dB/mW.
  • Keywords
    CMOS integrated circuits; Global Positioning System; MOSFET; low noise amplifiers; low-power electronics; radio receivers; MOS transistors; SMIC 1P6M RF CMOS process; gain 19 dB; gain 8 dB; input third order intermodulation point; integrated LNA; low-power low-noise amplifier; noise figure 4.2 dB; portable GPS receivers; portable global positioning system; post-layout simulation; power 1 mW; size 180 nm; voltage 0.7 V; CMOS process; Circuit simulation; Energy consumption; Gain; Global Positioning System; Low-noise amplifiers; MOSFETs; Radio frequency; Radiofrequency amplifiers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
  • Conference_Location
    Milpitas, CA
  • Print_ISBN
    978-1-4244-4886-9
  • Electronic_ISBN
    978-1-4244-4888-3
  • Type

    conf

  • DOI
    10.1109/ICCCAS.2009.5250406
  • Filename
    5250406