New Lateral IGBT with Controlled Anode on SOI substrate for PDP scan driver IC

Author

Chen, Wensuo ; Xie, Gang ; Zhang, Bo ; Zehong Li ; Zhao, Mei ; Li, Zehong

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2009

fDate

23-25 July 2009

Firstpage

628

Lastpage

630

Abstract

A new Lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called controlled anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0% reduction in turn-off time and about 20.0% increase in on-state voltage drop, as compared to the conventional LIGBT. The breakdown voltage is above 200V. The proposed SOI CA-LIGBT can be fabricated by the conventional trench SOI power IC´s process steps, and it is useful for PDP scan driver IC.

Keywords

driver circuits; insulated gate bipolar transistors; plasma displays; silicon-on-insulator; PDP scan driver IC; SOI substrate; controlled anode LIGBT; insulated-gate bipolar transistor; lateral IGBT structure; on-state voltage drop; Anodes; Bipolar integrated circuits; Conductivity; Driver circuits; Fabrication; Insulated gate bipolar transistors; Laboratories; Numerical simulation; Power integrated circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on

Conference_Location

Milpitas, CA

Print_ISBN

978-1-4244-4886-9

Electronic_ISBN

978-1-4244-4888-3

Type

conf

DOI

10.1109/ICCCAS.2009.5250427

Filename

5250427