• DocumentCode
    3387029
  • Title

    Effect of floating island thickness and doping concentration in power FLIMOS: 2-D simulation study

  • Author

    Ye, Hong ; Qiao, Ming ; Su, Wei ; Zhang, Bo

  • Author_Institution
    State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2009
  • fDate
    23-25 July 2009
  • Firstpage
    635
  • Lastpage
    637
  • Abstract
    Device simulations are applied to find out the effects of floating island thickness (dF) and doping concentration (Np+) in power floating island MOSFET (FLIMOS). The simulation results show that the specific on-resistance (Ronmiddotsp) increases by enlarging dF while Np+ produce little influence on Ronmiddotsp; When Np+ is low, the breakdown voltage (Vbr) improves by enlarging dF; When Np+ is high, the breakdown voltage (Vbr) degrades by enlarging dF.
  • Keywords
    MIS devices; electric breakdown; power MOSFET; semiconductor doping; breakdown voltage; doping concentration effect; floating island MOSFET; floating island thickness effect; power FLIMOS; specific on-resistance; Degradation; Doping; Epitaxial layers; Laboratories; MOSFET circuits; Physics; Power MOSFET; Power engineering and energy; Tellurium; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
  • Conference_Location
    Milpitas, CA
  • Print_ISBN
    978-1-4244-4886-9
  • Electronic_ISBN
    978-1-4244-4888-3
  • Type

    conf

  • DOI
    10.1109/ICCCAS.2009.5250430
  • Filename
    5250430
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3387029