Ga2O3 Schottky barrier diodes with n−-Ga2O3 drift layers grown by HVPE

The new wide-bandgap oxide semiconductor, gallium oxide (Ga₂O₃), has gained attraction as a promising candidate for power device applications because of its excellent material properties and suitability for mass production. The Baliga´s figure of merit of Ga₂O₃ is expected to be much larger than those of SiC and GaN due primarily to Ga₂O₃´s extremely large bandgap of 4.5~4.9 eV, which will enable Ga₂O₃ power devices with higher breakdown voltage (V_br) and efficiency than SiC and GaN devices [1]. The other important advantage of Ga₂O₃ is that large, high-quality bulk single crystals can be grown by using melt growth methods. Recently, we developed a homoepitaxial growth technique for high-purity Ga₂O₃ thin films on single-crystal Ga₂O₃ substrates by halide vapor phase epitaxy (HVPE) [2, 3]. This is the first report on Ga₂O₃ Schottky barrier diodes (SBDs) with epitaxial Si-doped n^--Ga₂O₃ drift layers grown by HVPE.