Modeling of Be diffusion in InGaAs epitaxial layers using two approaches: Boltzmann-Matano technique and point defect nonequilibrium

Author

Marcon, J. ; Koumetz, S. ; Ketata, K. ; Ketata, M. ; Launay, P.

Author_Institution

LCIA, INSA de Rouen, Mont Saint Aignan, France

fYear

1996

fDate

21-25 Apr 1996

Firstpage

706

Lastpage

709

Abstract

Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, two models have been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed

Keywords

III-V semiconductors; annealing; beryllium; diffusion; doping profiles; gallium arsenide; indium compounds; point defects; semiconductor doping; semiconductor epitaxial layers; semiconductor process modelling; Be dopant diffusion; Boltzmann-Matano technique; InGaAs epitaxial layer; InGaAs:Be; concentration profile; model; point defect nonequilibrium; post-growth annealing; Boundary conditions; Degradation; Doping; Epitaxial layers; Gaussian approximation; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Rapid thermal annealing; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492392

Filename

492392