Robust electrical characteristics of multiple-layer InAs/GaAs quantum-dot diodes under gamma irradiation

Author

Yifei Mu ; Lam, S. ; Zhao, C.Z. ; Babazadeh, N. ; Hogg, R.A. ; Nishi, K. ; Takemasa, K. ; Sugawara, M.

Author_Institution

Dept. of Electr. & Electron. Eng., Xi´an Jiaotong-Liverpool Univ., Suzhou, China

fYear

2015

fDate

21-24 June 2015

Firstpage

133

Lastpage

134

Abstract

To conclude, the InAs/GaAs QD devices display radiation-tolerant DC characteristics despite high total dose of gamma radiation. No permanent ionising damage to the III-V compound semiconductor devices has been observed. The off-state leakage current is not worsened even when the device is continuously irradiated by gamma radiation. The results show great promise of InAs/GaAs QD structure for realization of IR photodetectors with low noise floor and high reliability in radiation environments.

Keywords

III-V semiconductors; gallium arsenide; gamma-rays; indium compounds; leakage currents; photodetectors; semiconductor device noise; semiconductor device reliability; semiconductor diodes; semiconductor quantum dots; III-V compound semiconductor devices; IR photodetectors; InAs-GaAs; QD devices; gamma irradiation; off-state leakage current; quantum dot diode; Current measurement; Electrodes; Gold; Leakage currents; Radiation effects; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2015 73rd Annual

Conference_Location

Columbus, OH

Print_ISBN

978-1-4673-8134-5

Type

conf

DOI

10.1109/DRC.2015.7175591

Filename

7175591