DocumentCode
338858
Title
30 Gbit/s operation of a traveling-wave electroabsorption modulator
Author
Zhang, S.Z. ; Kaman, V. ; Keating, A. ; Yi-Jen Chiu ; Abraham, P. ; Bowers, J.E.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
3
fYear
1999
fDate
21-26 Feb. 1999
Firstpage
290
Abstract
Electroabsorption modulators with traveling-wave electrodes have been designed and fabricated using MOCVD grown InGaAsP-InGaAsP quantum wells. 30-Gbit/s transmission was demonstrated with a 2-/spl mu/m-wide 300-/spl mu/m-long device.
Keywords
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; semiconductor quantum wells; time division multiplexing; 2 mum; 30 Gbit/s; 300 mum; Gbit/s operation; Gbit/s transmission; InGaAsP-InGaAsP; InGaAsP-InGaAsP quantum wells; MOCVD grown; traveling-wave electroabsorption modulator; Bandwidth; Coplanar waveguides; Electrodes; Extinction ratio; Feeds; High speed optical techniques; Optical modulation; Optical saturation; Optical waveguides; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication. OFC/IOOC '99. Technical Digest
Conference_Location
San Diego, CA, USA
Print_ISBN
1-55752-582-X
Type
conf
DOI
10.1109/OFC.1999.768142
Filename
768142
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