Novel high-impedance photoconductive sampling probe for ultra-high speed circuit characterization

Author

Kim, J. ; Chan, Y.-J. ; Williamson, S. ; Nees, J. ; Wakana, S. ; Whitaker, J. ; Pavlidis, D.

Author_Institution

Michigan Univ., Ann Arbor, MI, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

19

Lastpage

22

Abstract

Reports on a novel probe technology applied to the measurement of high-speed guided electrical signals. The probe, based on the optoelectronic technique of photoconductive sampling, consists of a high-impedance gate fabricated using an interdigitated electrode structure on semi-insulating low-temperature-MBE (molecular beam epitaxy)-grown GaAs or on silicon-on-sapphire. Its resistance is 100 M Omega and its capacitance is less than 0.1 fF, making this probe very attractive for the noninvasive, external circuit testing of ultrahigh-speed devices and circuits with a 120-GHz measurement bandwidth. A 30-ps switching time was measured for an E/D-mode InAlAs/InGaAs HIGFET inverter using the probe.<>

Keywords

integrated circuit testing; molecular beam epitaxial growth; photoconducting devices; probes; 100 Mohm; 120 GHz; 30 ps; HIGFET inverter; MBE; SOS; capacitance; external circuit testing; high-impedance gate; interdigitated electrode structure; measurement bandwidth; photoconductive sampling probe; resistance; semi-insulating substrate; switching time; ultra-high speed circuit characterization; ultrahigh-speed devices; Capacitance; Electric resistance; Electric variables measurement; Electrical resistance measurement; Electrodes; Gallium arsenide; Molecular beam epitaxial growth; Photoconductivity; Probes; Sampling methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247232

Filename

247232