Magnetic and leakage current properties of Bi1−xGdxFeO3 thin films

Author

Ming-Cheng Kao ; Hone-Zern Chen ; San-Lin Young

Author_Institution

Dept. of Electron. Eng., Hsiuping Univ. of Sci. & Technol., Taichung, Taiwan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

178

Lastpage

180

Abstract

Bi_0.9Gd_0.1FeO₃ (BGFO) thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates using the sol-gel method. The thin films showed ferromagnetic properties with remnant magnetization (Mr) of 1.2 emu/g and saturation magnetization (Ms) of 5.3 emu/g. It was found that more than one conduction mechanism is involved in the electric field range used in these experiments. In the low electric field region, the leakage current was controlled by Poole-Frenkel emission. On the other hand, the mechanism can be explained by Schottky emission from the Pt electrode in the high field region.

Keywords

Poole-Frenkel effect; Schottky effect; bismuth compounds; ferrites; ferromagnetic materials; gadolinium compounds; leakage currents; magnetic thin films; remanence; sol-gel processing; Bi_0.9Gd_0.1FeO₃; Poole-Frenkel emission; Pt-Ti-SiO₂-Si; Schottky emission; electric field; ferromagnetic properties; leakage current properties; magnetic properties; remnant magnetization; saturation magnetization; sol-gel method; thin films; Annealing; Bismuth; Electric fields; Leakage current; Magnetic hysteresis; Saturation magnetization; Temperature measurement; Bismuth ferrite; Leakage current; Magnetic;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465989

Filename

6465989