A power MOSFET model based on a lumped-charge approach

Author

Budihardjo, Irwan ; Kongsang, Boonturn ; Lauritzen, P.O.

Author_Institution

Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA

fYear

1992

fDate

1992

Firstpage

165

Lastpage

171

Abstract

The lumped-charge approach offers a compact, physical power MOSFET model which is equivalent in complexity to the SPICE MOSFET model (level 1) used for low voltage devices. The surface charge is assumed to be lumped into nodes calculated using standard delta depletion (body region) or moderate depletion (drain region) approximations. An equivalent circuit for the MOSFET model can be derived from the interaction of the internal lumped-charges with the three external terminal voltages. The model is implemented in the SABER simulator. Simulated results are in good agreement with measured results.

Keywords

circuit analysis computing; digital simulation; equivalent circuits; insulated gate field effect transistors; power transistors; semiconductor device models; SABER simulator; body region; drain region; equivalent circuit; external terminal voltages; internal lumped-charges; lumped-charge approach; moderate depletion; power MOSFET model; standard delta depletion; Body regions; Capacitance; Circuit simulation; Electrodes; Equivalent circuits; Low voltage; MOSFET circuits; Mathematical model; Power MOSFET; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers in Power Electronics, 1992., IEEE Workshop on

Conference_Location

Berkeley, CA, USA

Print_ISBN

0-7803-0920-0

Type

conf

DOI

10.1109/CIPE.1992.247305

Filename

247305