DocumentCode
3389996
Title
BSIM-IMG: Compact model for RF-SOI MOSFETs
Author
Kushwaha, Pragya ; Agarwal, Harshit ; Khandelwal, Sourabh ; Duarte, Juan-Pablo ; Medury, Aditya ; Chenming Hu ; Chauhan, Yogesh S.
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
fYear
2015
fDate
21-24 June 2015
Firstpage
287
Lastpage
288
Abstract
Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz-8.5GHz.
Keywords
MOSFET; S-parameters; semiconductor device models; silicon-on-insulator; BSIM-IMG model; RF capabilities; RF-SOI MOSFET; experimental S-parameter data; frequency 100 kHz to 8.5 GHz; independent double gate MOSFET; industry standard compact model; robust compact model; Logic gates; MOSFET; Radio frequency; Semiconductor device modeling; Silicon; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location
Columbus, OH
Print_ISBN
978-1-4673-8134-5
Type
conf
DOI
10.1109/DRC.2015.7175688
Filename
7175688
Link To Document