Ink-jet printed In-Ga-Zn oxide nonvolatile TFT memory utilizing silicon nanocrystals embedded in SiO2 gate dielectric

Author

Wang, Yannan ; Chen, T.P. ; Sun, X.W. ; Wong, J.I. ; Yang, H.Y. ; Zhao, J.L.

Author_Institution

Sch. of EEE, Technol. Univ., Singapore, Singapore

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

222

Lastpage

225

Abstract

A nonvolatile memory based on ink-jet printed In-Ga-Zn oxide (IGZO) thin film transistor with bottom gate bottom contact architecture is reported. The memory device contains SiO₂ gate dielectric layer embedded with silicon nanocrystals, which act as charge trapping sites. Memory effects were observed by a clockwise loop in V_gs-I_d curves, which is attributed to the charging and discharging of the silicon nanocrystals. The printed IGZO memory exhibits a high (about 1 × 10³) on/off ratio.

Keywords

dielectric materials; gallium; indium; ink jet printing; nanostructured materials; random-access storage; semiconductor thin films; silicon compounds; thin film transistors; zinc; In-Ga-Zn; Si; SiO₂; bottom gate bottom contact architecture; charge trapping sites; clockwise loop; gate dielectric layer; ink-jet printed IGZO thin film transistor; ink-jet printed oxide nonvolatile TFT memory; memory device; memory effects; silicon nanocrystals; Ink jet printing; Logic gates; Nanocrystals; Nonvolatile memory; Silicon; Thin film transistors; Threshold voltage; In-Ga-Zn oxide; ink-jet printing; nonvolatile memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466004

Filename

6466004