• DocumentCode
    3390471
  • Title

    Doped group-IV semiconductor nanocrystals

  • Author

    Nataraj, L. ; Jackson, Andrew ; Giri, L. ; Hubbard, C. ; Bundy, M.

  • Author_Institution
    U.S. Army Res. Lab., Aberdeen Proving Ground, MD, USA
  • fYear
    2013
  • fDate
    2-4 Jan. 2013
  • Firstpage
    298
  • Lastpage
    299
  • Abstract
    Doped semiconductor nanocrystals offer great potential for microelectronics and integrated optoelectronics. Nanocrystal based technology is promising for several fields of technology such as thin conducting films, light emitting devices, tunable lasers, transistors, photovoltaics, and less harmful alternatives to toxic fluorescent dyes for application in bio-imaging, to name a few. While properties of nanocrystals are tunable through their size, considerable research is underway to explore the influence of dopants on the properties of semiconductor nanocrystals. The introduction of dopants has been elusive for these confined structures due to their nanoscale sizes as well as the possibility of making them degenerate even with the addition of very small quantities of the dopant. Here, we present a facile, low-cost procedure that we have developed for the synthesis of non-degenerate doped semiconductor nanocrystals and study their properties.
  • Keywords
    IV-VI semiconductors; integrated optoelectronics; light emitting devices; nanofabrication; nanostructured materials; semiconductor doping; transistors; dopants; doped group-IV semiconductor nanocrystals; integrated optoelectronics; light emitting devices; microelectronics; nanocrystal based technology; nondegenerate doped semiconductor nanocrystals; photovoltaics; thin conducting films; toxic fluorescent dyes; transistors; tunable lasers; Conferences; Decision support systems; Nanoelectronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2013 IEEE 5th International
  • Conference_Location
    Singapore
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4673-4840-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2013.6466028
  • Filename
    6466028