DocumentCode
3390842
Title
A 5Gb/s pulse signaling interface for low power on-chip data communication
Author
Lin, Hung-Wen ; Ho, Ying-Chieh ; Fa, YingLin ; Su, Chauchin
Author_Institution
Yuan-Ze Univ., Jhong Li, Taiwan
fYear
2010
fDate
May 30 2010-June 2 2010
Firstpage
201
Lastpage
204
Abstract
This paper presents an on-chip pulse signaling scheme for low power on-chip interconnection. Both near-end and far-end employ equalization circuits to compensate the high frequency attenuation of long channel. The on-chip data bus is designed by co-planar micro-strip line in Metal 5 and Metal 6 and with a characteristic impedance of 75 ohm. The receiver uses self-biased inverters and transmission gates to design inductive-peaking and non-clock hysteresis amplifiers. In 0.13um CMOS process, the proposed I/O occupies a total area of 0.07mm2. At a bit rate of 5Gbps, the accumulated peak-to-peak jitter of overall I/O system and a 5mm of channel length is 76ps. And it consumes 8mW of power under 1.2V supply voltage or with a power efficiency of 0.32pJ/bit/mm.
Keywords
CMOS integrated circuits; amplifiers; low-power electronics; microstrip lines; multiprocessor interconnection networks; system-on-chip; CMOS process; bit rate 5 Gbit/s; coplanar microstrip line; inductive-peaking; low power on-chip data communication; low power on-chip interconnection; nonclock hysteresis amplifier; on-chip pulse signaling scheme; peak-to-peak jitter; power 8 mW; self-biased inverter; size 0.13 micron; transmission gate; voltage 1.2 V; Attenuation; Bit rate; CMOS process; Data communication; Frequency; Hysteresis; Impedance; Integrated circuit interconnections; Inverters; Jitter;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location
Paris
Print_ISBN
978-1-4244-5308-5
Electronic_ISBN
978-1-4244-5309-2
Type
conf
DOI
10.1109/ISCAS.2010.5537978
Filename
5537978
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