• DocumentCode
    3391731
  • Title

    Molecular contamination on silicon wafers: a theoretical study

  • Author

    Zhu, Slheng-Bai

  • Author_Institution
    Asyst Technol. Inc., Fremont, CA, USA
  • fYear
    1997
  • fDate
    10-12 Sep 1997
  • Firstpage
    175
  • Lastpage
    179
  • Abstract
    Airborne Molecular Contamination (AMC) on silicon wafers is mainly determined by the gas phase concentrations of the contaminants, the adsorption energy of the molecules on the surface, and their removal rate. In this paper, we will develop a potential energy function to describe interactions between adsorbed molecules and the solid surfaces. This potential function will be used to predict adsorption energies of organic/inorganic molecules on silicon wafer surfaces. With the aid of a simplified kinetic theory, relationships between gas phase concentrations and the surface density of deposits are derived. To the best of our knowledge, this is the first theoretical study of molecular contamination on silicon wafers at the level of atomic interactions. The approach can also be used to study cleaning efficiencies and corrosion of air handling equipment
  • Keywords
    adsorption; elemental semiconductors; potential energy functions; silicon; surface contamination; Si; adsorption energy; air handling equipment; airborne molecular contamination; cleaning efficiency; corrosion; gas phase concentration; kinetic theory; potential energy function; removal rate; silicon wafer; surface density; Charge carrier processes; Chemicals; Corrugated surfaces; Kinetic theory; Pollution; Potential energy; Silicon; Solids; Surface contamination; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI
  • Conference_Location
    Cambridge, MA
  • ISSN
    1078-8743
  • Print_ISBN
    0-7803-4050-7
  • Type

    conf

  • DOI
    10.1109/ASMC.1997.630729
  • Filename
    630729