DocumentCode
3391731
Title
Molecular contamination on silicon wafers: a theoretical study
Author
Zhu, Slheng-Bai
Author_Institution
Asyst Technol. Inc., Fremont, CA, USA
fYear
1997
fDate
10-12 Sep 1997
Firstpage
175
Lastpage
179
Abstract
Airborne Molecular Contamination (AMC) on silicon wafers is mainly determined by the gas phase concentrations of the contaminants, the adsorption energy of the molecules on the surface, and their removal rate. In this paper, we will develop a potential energy function to describe interactions between adsorbed molecules and the solid surfaces. This potential function will be used to predict adsorption energies of organic/inorganic molecules on silicon wafer surfaces. With the aid of a simplified kinetic theory, relationships between gas phase concentrations and the surface density of deposits are derived. To the best of our knowledge, this is the first theoretical study of molecular contamination on silicon wafers at the level of atomic interactions. The approach can also be used to study cleaning efficiencies and corrosion of air handling equipment
Keywords
adsorption; elemental semiconductors; potential energy functions; silicon; surface contamination; Si; adsorption energy; air handling equipment; airborne molecular contamination; cleaning efficiency; corrosion; gas phase concentration; kinetic theory; potential energy function; removal rate; silicon wafer; surface density; Charge carrier processes; Chemicals; Corrugated surfaces; Kinetic theory; Pollution; Potential energy; Silicon; Solids; Surface contamination; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
0-7803-4050-7
Type
conf
DOI
10.1109/ASMC.1997.630729
Filename
630729
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