GaAs JFET front-end MMICs for L-band personal communications

Author

Ohgihara, T. ; Kusunoki, S. ; Wada, M. ; Murakami, Y.

Author_Institution

Sony Corp., Yokohama, Japan

fYear

1993

fDate

14-15 June 1993

Firstpage

9

Lastpage

12

Abstract

The development of GaAs JFET (junction field-effect transistor) low noise and low distortion amplifier and mixer MMICs (monolithic microwave integrated circuits) for front-end use in L-band personal communications is discussed. These MMICs can be operated by a 3.0-V single biasing supply with a very low current dissipation of 4.0 mA. In order to achieve excellent low intermodulation distortion, a current-mirror active biasing circuit using enhancement-mode JFETs and a resistive mixing configuration have been realized.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; junction gate field effect transistors; microwave amplifiers; mixers (circuits); personal communication networks; radio equipment; 3 V; 3.0-V single biasing supply; 4 mA; GaAs; JFET front-end MMICs; L-band personal communications; LNA; current-mirror active biasing circuit; enhancement-mode JFETs; intermodulation distortion; junction field-effect transistor; low IMD; low current dissipation; low distortion amplifier and mixer; low noise; monolithic microwave integrated circuits; resistive mixing configuration; Field effect MMICs; Gallium arsenide; Integrated circuit noise; JFET integrated circuits; L-band; Low-noise amplifiers; Microwave FET integrated circuits; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-1322-4

Type

conf

DOI

10.1109/MCS.1993.247488

Filename

247488