DocumentCode
3393192
Title
SiGe BiCMOS technology for RF device and design applications
Author
Ahlgren, D.C. ; King, N. ; Freeman, G. ; Groves, R. ; Subbanna, S.
Author_Institution
IBM Corp., Hopewell Junction, NY, USA
fYear
1999
fDate
1999
Firstpage
281
Lastpage
284
Abstract
In this paper we demonstrate the advantages of SiGe BiCMOS for wireless designers and discuss several wireless circuits currently available in this technology as illustrations of the value of designing in SiGe BiCMOS. Finally, we discuss the future evolution of the technology
Keywords
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit technology; RF device applications; SiGe; SiGe BiCMOS technology; wireless applications; BiCMOS integrated circuits; CMOS technology; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Isolation technology; Noise figure; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Conference, 1999. RAWCON 99. 1999 IEEE
Conference_Location
Denver, CO
Print_ISBN
0-7803-5454-0
Type
conf
DOI
10.1109/RAWCON.1999.810985
Filename
810985
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