Research on Transient Model of IGBT

Author

Zhu, Xianhui ; Cui, Shumei ; Shi, Nan ; Zhang, Shuo

Author_Institution

Sch. of Electr. Eng. & Autom., Harbin Inst. & Technol., Harbin, China

fYear

2012

fDate

27-29 March 2012

Firstpage

1

Lastpage

4

Abstract

Electromagnetic interference problem caused by fast voltage/current rate of switching components becomes more and more seriously, which effects electromagnetic compatibility of devices greatly. It is necessary to build the transient model of switching devices. In this paper, a simple method of IGBT modeling is proposed, which depends on the data provided by chip manual, without the requirements of complex experimental test. The model are verified by the comparison of simulation and experiment results in time and frequency domain, the consistence of which reveals the validity of the model under the frequency of conduction.

Keywords

electromagnetic compatibility; electromagnetic interference; frequency-domain analysis; insulated gate bipolar transistors; semiconductor device models; time-domain analysis; IGBT; electromagnetic compatibility; electromagnetic interference problem; frequency domain; switching components; time domain; transient model; Analytical models; Capacitance; Insulated gate bipolar transistors; Mathematical model; Resistance; Switches; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Power and Energy Engineering Conference (APPEEC), 2012 Asia-Pacific

Conference_Location

Shanghai

ISSN

2157-4839

Print_ISBN

978-1-4577-0545-8

Type

conf

DOI

10.1109/APPEEC.2012.6307368

Filename

6307368