DocumentCode
3393971
Title
Plasma induced charging damage and oxide degradation after dry etch processing
Author
Karzhavin, Yuri ; Wu, Wei
Author_Institution
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear
1997
fDate
10-12 Sep 1997
Firstpage
234
Lastpage
244
Abstract
Plasma induced charging damage and oxide degradation after metal and poly etch and photo-resist strip were studied using unpatterned oxide wafer technique. The time dependence of plasma induced charging, internal oxide damage and charging “fingerprint” were investigated for poly etch, metal etch and photo-resist strip after metal etch processes. Comparison of oxide charging monitor results and SPIDER antennae structures data for photo-resist strip process is presented
Keywords
photoresists; sputter etching; surface charging; SPIDER antenna; dry etch processing; fingerprint; metal; monitor; oxide degradation; photoresist strip; plasma induced charging damage; polysilicon; unpatterned wafer technique; Degradation; Dry etching; Monitoring; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma sources; Surface charging; Surface discharges;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
0-7803-4050-7
Type
conf
DOI
10.1109/ASMC.1997.630741
Filename
630741
Link To Document