Pulsed READ in spin transfer torque (STT) memory bitcell for lower READ disturb

In this paper we propose a pulsed READ for 1T-1R STT-MRAM bitcell to reduce READ disturb during the process of READing. The basic premise of the approach is based on the fact, that the READ current perturbs the nano-magnet and creates a torque, which moves the magnetic vector from the easy-axis. Monte Carlo simulations performed under variation of both the storage node and the access device reveals that the READ failure probability is significantly reduced for two different current levels when the bitcell is READ with a pulsed word line (WL) with the same current and same effective time.